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Bernard A Yurash
Bernard A Yurash (February 17, 1921 - January 25, 2007) was a significant contributor to the creation of the first commercially viable CMOS integrated circuits by finding the sources of mobile sodium ions coming from the manufacturing process. Today, virtually all digital electronics use CMOS circuitry. Bernard worked at Fairchild Semiconductor in Silicon Valley from 1958 ( he was employee number 158 ), through the buyouts of the company by Schlumberger and National Semiconductor, and finally retiring in 1990. In the 1960s Fairchild Semiconductor, a division of Fairchild Camera and Instrument Corp., and Texas Instruments, revolutionized electronics by employing the first integrated circuit technology. Fairchild's Robert Noyce 〔Robert Noyce〕〔http://inventors.about.com/od/nstartinventors/p/Robert_Noyce.htm〕 filed for this patent using deposited (printed) metal lines and Jean Hoerni's Planar Process〔http://www.computerhistory.org/semiconductor/timeline/1959-invention-of-the-planar-manufacturing-process-24.html〕 ( patent also filed by Jack Kilby of Texas Instruments but with using bonding wires ). At the time virtually all the devices were of the bipolar type which were used to construct RTL and DTL type circuits ( Resistor-Transistor-Logic, Diode-Transistor-Logic), which unfortunately drew more power than was desired, and eventually lost ground to Texas Instruments' TTL (Transistor-Transistor-logic). The next great technological leap in computer chips would be CMOS transistors, which promised significantly lower power and greater circuit density than the Bipolar circuitry. Although Frank Wanlass first filed for the CMOS patent in 1963,〔http://www.computerhistory.org/semiconductor/timeline/1963-CMOS.html〕 Fairchild could not produce the devices for commercial output for many years because of the mystery of the mobile ions degrading their performance. Much research time and money was expended in 1967 and 1968 at Fairchild on trying to manufacture the highly promising technology, the MOS SGT ( Metal Oxide Semiconductor Silicon Gate Technology ) circuits utilizing the field effect from the "gate" on the conducting "channel" from source to drain.
== Fairchild Semiconductor〔Fairchild Semiconductor〕〔http://www.pbs.org/transistor/background1/corgs/fairchild.html〕==
Fairchild Semiconductor and the companies started by former Fairchild employees put the silicon in "Silicon Valley".
"They (Bob Noyce and Gordon Moore ) left Fairchild to found Intel in 1968 and were soon joined by Andrew Grove and Leslie L. Vadász, who took with them the revolutionary MOS Silicon Gate Technology (SGT), recently created in the Fairchild R&D Laboratory by Federico Faggin who also designed the Fairchild 3708, the world’s first commercial MOS integrated circuit using SGT. Fairchild MOS Division was slow in understanding the potential of the SGT which promised not only faster, more reliable, and denser circuits, but also new device types that could enlarge the field of solid state electronics — for example, CCDs for image sensors, dynamic RAMs, and non-volatile memory devices such as EPROM and flash memories. Intel took advantage of the SGT for its memory development."
抄文引用元・出典: フリー百科事典『 ウィキペディア（Wikipedia）』
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